IXTV02N250 Datasheet, PDF (1/5 Pages) IXYS Corporation – N-Channel Enhancement Mode Fast Intrinsic Diode

High Voltage
Power MOSFETs
N-Channel Enhancement Mode
Fast Intrinsic Diode
IXTA02N250
IXTH02N250
IXTV02N250S
V_DSS =
I_D25 =
≤ R_DS(on)
2500V
200mA
450Ω
TO-263 (IXTA)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
Mounting Force (PLUS220 & TO-263)
TO-263
PLUS220
TO-247
Maximum Ratings
2500
V
2500
V
±20
V
±30
V
200
mA
600
mA
83
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
300
°C
260
°C
1.13 / 10
11..65 / 25..14.6
Nm/lb.in
N/lb.
2.5
g
4.0
g
6.0
g
G
S
D (Tab)
TO-247 (IXTH)
G
DS
D (Tab)
PLUS220SMD (IXTV_S)
G
S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = 0.8 • V_DSS
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 50mA, Note 1
Characteristic Values
Min. Typ. Max.
2500
V
2.5
4.5 V
±100 nA
5 μA
500 μA
450 Ω
Features
z _{Fast Intrinsic Diode}
z _{Low Package Inductance}
Advantages
z _{Easy to Mount}
z _{Space Savings}
Applications
z _{High Voltage Power Supplies}
z _{Capacitor Discharge}
z _{Pulse Circuits}
© 2012 IXYS CORPORATION, All Rights Reserved
DS100187C(04/12)