IXTU1R4N60P Datasheet, PDF (1/4 Pages) IXYS Corporation – N-Channel Enhancement Mode Avalanche Rated

PolarHV^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTP 1R4N60P
IXTU 1R4N60P
IXTY 1R4N60P
V = 600 V
DSS
I_D25 = 1.4 A
R_DS(on) ≤ 9.0 Ω
Symbol
V_DSS
V
DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T
L
T_SOLD
Weight
Test Conditions
T_J = 25° C to 175° C
T
J
=
25°
C
to
175°
C;
R
GS
=
1
MΩ
Continuous
Transient
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 20 Ω
T_C = 25° C
1.6 mm (0.062) from case for 10 s
Plastic body for 10 s
TO-220
TO-252
TO-251
Maximum Ratings _{TO-220 (IXTP)}
600
V
600
V
±30
V
±40
V
G _DS
1.4
A
2.1
A ^{TO-251 (IXTU)}
1.4
A
5
mJ
75
mJ
(TAB)
10
50
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
G
D
S
TO-252 (IXTY)
(TAB)
300
260
4.0
0.35
0.4
°C
°C
g
g
g ^{G = Gate}
S = Source
G
S
(TAB)
D = Drain
TAB = Drain
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 25 µA
Characteristic Values
Min. Typ. Max.
600
V
V
GS(th)
V
DS
=
V,
GS
I
D
=
25
µA
3.0
5.5 V
I_GSS
V_GS = ±30 V_DC, V_DS = 0
±50 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125° C
1 µA
20 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
9.0 Ω
Features
l _{International standard packages}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99253E(10/05)