IXTU05N100 Datasheet, PDF (1/4 Pages) IXYS Corporation – High Voltage Power MOSFET

High Voltage
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTU05N100
IXTY05N100
V_DSS =
I_D25 =
≤ R_DS(on)
1000V
750mA
17Ω
TO-251
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J =150°C
T_C = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting force
TO-251
TO-252
Maximum Ratings
1000
V
1000
V
±30
V
±40
V
750
mA
3
A
1
A
100
mJ
3
V/ns
40
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
0.40
g
0.35
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = ± 30V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 375mA, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
2.5
4.5 V
±100 nA
25 μA
500 μA
17 Ω
G
D
S
D (TAB)
TO-252
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{Fast switching times}
z _{Avalanche Rated}
z _{Rugged polysilicon gate cell structure}
z _{Extended FBSOA}
Applications
z _{Switch-mode and resonant-mode}
power supplies
z _{Flyback inverters}
z _{DC choppers}
Advantages
z _{High power density}
z _{Space savings}
© 2009 IXYS CORPORATION, All rights reserved
DS100102(01/09)