IXTU01N100 Datasheet, PDF (1/2 Pages) IXYS Corporation – High Voltage MOSFET N-Channel, Enhancement Mode

High Voltage MOSFET
N-Channel, Enhancement Mode
IXTU 01N100
IXTY 01N100
V
DSS
I
D25
R_DS(on)
= 1000 V
= 100mA
= 80 Ω
Symbol
V_DSS
V_DGR
V_GS
V
GSM
I_D25
I_DM
P_D
T
J
T_JM
T_stg
T_L
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C; T_J = 25°C to 150°C
T_C = 25°C, pulse width limited by max. T_J
T_C = 25°C
1.6 mm (0.063 in) from case for 5 s
Maximum Ratings
01N100
1000
V
1000
V
±20
V
±30
V
100
mA
400
mA
25
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
0.8
g
TO-251 AA
G
D
S
TO-252 AA
D (TAB)
G
S
G = Gate,
S = Source,
D (TAB)
D = Drain,
TAB = Drain
Symbol
V
DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 25 µA
1000
V_DS = V_GS, I_D = 25 µA
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = I_D25
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2 %
2
60
V
V
4.5 V
±50 nA
10 µA
200 µA
80 Ω
Features
l _{Internationalstandardpackages}
JEDEC TO-251 AA, TO-252 AA
l _{Low RDS (on) HDMOS}TM _process
l _{Rugged polysilicon gate cell structure}
l _{Fast switching times}
Applications
l _{Level shifting}
l _Triggers
l _{Solid state relays}
l _{Current regulators}
© 2001 IXYS All rights reserved
98812B (11/01)