IXTT90P10P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarPTM Power MOSFETs

PolarP^TM
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
IXTT90P10P
IXTH90P10P
D
G
S
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
TO-268
TO-247
Maximum Ratings
-100
V
-100
V
±20
V
±30
V
- 90
A
- 225
A
- 90
A
2.5
J
10
V/ns
462
W
- 55 ... +150
150
- 55 ... +150
300
260
1.13 / 10
°C
°C
°C
°C
°C
Nm/lb.in.
6
g
4
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = - 250μA
V_GS(th)
V_DS = V_GS, I_D = - 250μA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = -10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
-100
V
- 2.0
- 4.0 V
±100 nA
- 25 μA
- 200 μA
25 mΩ
V_DSS =
I_D25 =
≤ R_DS(on)
- 100V
- 90A
25mΩ
TO-268 (IXTT)
G
S
D (Tab)
TO-247 (IXTH)
G
DS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features:
z _{International Standard Packages}
z _{Avalanche Rated}
z _{Fast Intrinsic Diode}
z _{Rugged PolarP}TM _Process
z _{Low Package Inductance}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{High-Side Switches}
z _{Push Pull Amplifiers}
z _{DC Choppers}
z _{Automatic Test Equipment}
z _{Current Regulators}
© 2013 IXYS CORPORATION, All Rights Reserved
DS99986B(01/13)