IXTT75N10 Datasheet, PDF (1/2 Pages) IXYS Corporation – MegaMOS FET

High Current
Power MOSFET
N-Channel Enhancement Mode
IXTN 58N50
IXTN 61N50
V_DSS
500 V
500 V
I_D25
58 A
61 A
R_DS(on)
85 mΩ
75 mΩ
Preliminary Data
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I
DM
P_D
T_J
T_JM
T
stg
V
ISOL
M_d
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1.0 MΩ
500
V
500
V
Continuous
Transient
±20
V
±30
V
T_C = 25°C
T = 25°C
C
Pulse width limited by T_JM
T_C = 25°C
IXTN 58N50
58
A
IXTN 61N50
61
A
IXTN 58N50 232
A
IXTN 61N50 244
A
625
W
-40 ... +150
°C
150
°C
-40 ... +150
°C
50/60 Hz, RMS
t = 1 minute
t = 1s
2500
V~
3000
V~
Mounting torque
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Test Conditions
V_GS = 0 V, I_D = 5 mA
Characteristic Values
(T_J = 25°C unless otherwise specified)
Min. Typ.
Max.
500
V
V_DS = V_GS, I_D = 12 mA
1.7
4.0 V
V_GS = ±20 V DC, V_DS = 0
±200 nA
V_DS = 0.8 V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 I_D25
58N50
61N50
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
500 µA
2 mA
85 mΩ
75 mΩ
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate
D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard package
• Isolation voltage 3000V (RMS)
• Low R HDMOS^TM process
DS (on)
• Rugged polysilicon gate cell structure
• Low drain-to-case capacitance
(<100 pF)
- reduced RFI
• Low package inductance (< 10 nH)
- easy to drive and to protect
• Aluminium Nitride Isolation
- increased current ratings
Applications
• DC choppers
• AC motor speed controls
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched mode and resonant mode
power supplies
Advantages
• Easy to mount
• Space savings
• High power density
© 1997 IXYS All rights reserved
95501B(4/97)