IXTT50P10 Datasheet, PDF (1/4 Pages) IXYS Corporation – Standard Power MOSFET

Standard
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTH50P10
IXTT50P10
V_DSS =
I_D25 =
≤ R_DS(on)
- 100V
- 50A
55mΩ
TO-247 (IXTH)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque (TO-247)
TO-247
TO-268
Maximum Ratings
-100
V
-100
V
±20
V
±30
V
- 50
A
- 200
A
- 50
A
30
mJ
300
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
6
g
5
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = - 250 μA
V_GS(th)
V_DS = V_GS, I_D = - 250μA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = 0.8 • V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = -10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
-100
V
- 3.0
- 5.0 V
±100 nA
- 25 μA
-1 mA
55 mΩ
G
D
S
TO-268 (IXTT)
(TAB)
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packages}
JEDEC TO-247 AD
z _{Low RDS(ON) HDMOS}TM _process
z _{Rugged polysilicon gate cell structure}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance (< 5nH)}
- easy to drive and to protect
Applications
z _{High side switching}
z _{Push-pull amplifiers}
z _{DC Choppers}
z _{Automatic test equipment}
Advantages
z _{Easy to mount with 1 screw}
(isolated mounting screw hole)
z _{Space savings}
z _{High power density}
© 2008 IXYS CORPORATION, All rights reserved
DS98905E(6/08)