IXTT36N50P Datasheet, PDF (1/5 Pages) IXYS Corporation – N-Channel Enhancement Mode

Advanced Technical Information
PolarHV^TM
Power MOSFET
N-Channel Enhancement Mode
IXTQ 36N50P
IXTT 36N50P
V
DSS
I_D25
R_DS(on)
= 500 V
= 36 A
≤ 170 mΩ
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I
AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T
C
= 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 4 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body
Mounting torque (TO-3P)
TO-3P
TO-268
Maximum Ratings
500
V
500
V
±20
V
±30
V
36
A
100
A
36
A
50
mJ
1.5
J
10
V/ns
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
250
°C
1.13/10 Nm/lb.in.
5.5
g
5.0
g
Symbol
Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
V_DSS
V_GS = 0 V, I_D = 250 μA
Characteristic Values
Min. Typ. Max.
500
V
V_GS(th)
V_DS = V_GS, I_D = 250μA
2.5
5.0 V
I_GSS
V_GS = ±30 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125°C
25 μA
250 μA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
170 mΩ
TO-3P (IXTQ)
G
D
S
D (TAB)
TO-268 (IXTT)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2004 IXYS All rights reserved
DS99228(11/04)