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| IXTT24P20 Datasheet, PDF (1/5 Pages) IXYS Corporation – Standard Power MOSFET | |||
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Standard Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTH 24P20
VDSS = - 200 V
ID25 = - 24 A
⤠RDS(on) 0.11 â¦
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 Mâ¦
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJ
TC = 25°C
TC = 25°C
TC = 25°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Maximum Ratings
-200
V
-200
V
±20
V
±30
V
-24
A
-96
A
-24
A
30
mJ
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
400
°C
1.13/10 Nm/lb.in.
6
g
TO-247 AD
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
⢠International standard package
JEDEC TO-247 AD
⢠Low RDS (on) HDMOSTM process
⢠Rugged polysilicon gate cell structure
⢠Unclamped Inductive Switching (UIS)
rated
⢠Low package inductance (<5 nH)
- easy to drive and to protect
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
VGS = 0 V, ID = -250 µA
VDS = VGS, ID = -250 µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 ⢠VDSS
VGS = 0 V
VGS = -10 V, ID = 0.5 ⢠ID25
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
-200
V
-3.0
TJ = 25°C
TJ = 125°C
-5.0 V
±100 nA
-25 µA
-1 mA
0.11 â¦
Applications
⢠High side switching
⢠Push-pull amplifiers
⢠DC choppers
⢠Automatic test equipment
Advantages
⢠Easy to mount with 1 screw
(isolated mounting screw hole)
⢠Space savings
⢠High power density
© 2004 IXYS All rights reserved
DS98769F(12/04)
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