IXTT1N450HV Datasheet, PDF (1/5 Pages) IXYS Corporation – High Voltage Power MOSFET

High Voltage
Power MOSFET
Preliminary Technical Information
IXTT1N450HV
V_DSS
I
D25
R_DS(on)
= 4500V
= 1A
≤ 85Ω
N-Channel Enhancement Mode
TO-268 (IXTT)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Maximum Ratings
4500
V
4500
V
±20
V
±30
V
1
A
3
A
520
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
300
°C
260
°C
4
g
G
S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z _{High Blocking Voltage}
z _{High Voltage Package}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = 3.6kV, V_GS = 0V
V_DS = 4.5kV
V_DS = 3.6kV
T_J = 100°C
R_DS(on)
V_GS = 10V, I_D = 50mA, Note 1
Characteristic Values
Min. Typ. Max.
3.5
6.0 V
±100 nA
10 μA
50 μA
25
μA
85 Ω
Applications
z _{High Voltage Power Supplies}
z _{Capacitor Discharge Applications}
z _{Pulse Circuits}
z _{Laser and X-Ray Generation Systems}
© 2013 IXYS CORPORATION, All Rights Reserved
DS100500A(04/13)