English
Language : 

IXTT16N20D2 Datasheet, PDF (1/6 Pages) IXYS Corporation – Depletion Mode MOSFET
Depletion Mode
MOSFET
N-Channel
Preliminary Technical Information
IXTH16N20D2
IXTT16N20D2
VDSX =
ID(on) >
≤ RDS(on)
200V
16A
73mΩ
TO-247 (IXTH)
Symbol
VDSX
VDGX
VGSX
VGSM
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
TO-247
TO-268
Maximum Ratings
200
V
200
V
±20
V
±30
V
695
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
6
g
4
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSX
VGS = - 5V, ID = 250μA
VGS(off)
VDS = 25V, ID = 4mA
IGSX
VGS = ±20V, VDS = 0V
IDSX(off)
VDS = VDSX, VGS = - 5V
RDS(on)
ID(on)
VGS = 0V, ID = 8A, Note 1
VGS = 0V, VDS = 25V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
200
V
- 2.0
- 4.0 V
±100 nA
5 μA
100 μA
73 mΩ
16
A
G
DS
D (Tab)
TO-268 (IXTT)
G
S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Flammability Classification
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
© 2012 IXYS CORPORATION, All Rights Reserved
DS100260A(08/12)