IXTT10P60 Datasheet, PDF (1/5 Pages) IXYS Corporation – Power MOSFETs

Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
IXTT10P60
IXTH10P60
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
P_D
T_J
T_JM
T_stg
T_L
T_sold
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-268
TO-247
Maximum Ratings
- 600
V
- 600
V
±20
V
±30
V
- 10
A
- 40
A
- 10
A
3
J
300
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
4
g
6
g
Symbol
Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = - 250μA
V_GS(th)
V_DS = V_GS, I_D = - 250μA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = 0.8 • V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min.
Typ. Max.
- 600
V
- 3.0
- 5.0 V
±100 nA
- 25 μA
-1 mA
1Ω
V=
DSS
I_D25 =
≤ R_DS(on)
- 600V
- 10A
1Ω
TO-268 (IXTT)
G
S
D (Tab)
TO-247 (IXTH)
G
DS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
z _{International Standard Packages}
z _{Low RDS (on) HDMOS}TM _Process
z _{Rugged Polysilicon Gate Cell Structure}
z _{Avalanche Rated}
z _{Low Package Inductance}
- Easy to Drive and to Protect
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{High-Side Switching}
z _{Push Pull Amplifiers}
z _{DC Choppers}
z _{Automatic Test Equipment}
© 2013 IXYS CORPORATION, All Rights Reserved
DS98849E(01/13)