IXTR90P10P Datasheet, PDF (1/5 Pages) IXYS Corporation – P-Channel Enhancement Mode

PolarP^TM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTR90P10P
D
G
S
V_DSS =
I_D25 =
R_DS(on) ≤
- 100V
- 57A
27mΩ
ISOPLUS247
E153432
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 H_Z , RMS t = 1min
Mounting Force
Maximum Ratings
- 100
V
- 100
V
±20
V
±30
V
- 57
A
- 225
A
- 90
A
2.5
J
10
V/ns
190
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
2500
20..120/4.5..27
6
V~
N/lb.
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = - 250μA
V_GS(th)
V_DS = V_GS, I_D = - 250μA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = -10V, I_D = - 45A, Note 1
Characteristic Values
Min.
Typ.
Max.
-100
V
- 2.0
- 4.0 V
±100 nA
- 25 μA
- 200 μA
27 mΩ
G
D
S
Isolated Tab
G = Gate D = Drain
S = Source
Features
z _{Silicon Chip on Direct-Copper Bond}
(DCB) Substrate
- UL Recognized Package
- Isolated Mounting Surface
- 2500V~ Electrical Isolation
z _{Avalanche Rated}
z _{High Current Handling Capability}
z _{Fast Intrinsic Diode}
z _{The Rugged PolarP}TM _Process
z _{Low QG}
z _{Low Drain-to-Tab capacitance}
z _{Low Package Inductance}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{High-Side Switches}
z _{Push Pull Amplifiers}
z _{DC Choppers}
z _{Automatic Test Equipment}
z _{Current Regulators}
© 2013 IXYS CORPORATION, All Rights Reserved
DS99985B(01/13)