IXTR62N15P Datasheet, PDF (1/2 Pages) IXYS Corporation – N-Channel Enhancement Mode

Preliminary Technical Information
PolarHT^TM Power
MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
IXTC 62N15P
IXTR 62N15P
V_DSS =
I_D25 =
R_DS(on) ≤
150
36
45
V
A
mΩ
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T
J
T_JM
T_stg
T_L
F
C
Weight
Test Conditions
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 10 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Mounting force
ISOPLUS220
ISOPLUS247
ISOPLUS220
ISOPLUS247
Maximum Ratings
150
V
150
V
± 20
V
± 30
V
36
A
150
A
50
A
30
mJ
1.0
J
10
V/ns
150
W
-55 ... +175
°C
150
°C
-55 ... +150
°C
300
°C
11..65 / 2.5..15
N/lb
20..120 / 4.5..25
N/lb
3
g
5
g
Symbol
Test Conditions
(T_J = 25° C unless otherwise specified)
BV
DSS
V
GS
=
0
V,
I
D
=
250
µA
Characteristic Values
Min. Typ. Max.
150
V
V_GS(th)
V_DS = V_GS, I_D = 250 µA
3.0
5.0 V
I_GSS
V_GS = ± 20 V_DC, V_DS = 0
± 100 nA
I_DSS
V_DS = V_DSS
V =0V
GS
T
J
=
125°
C
10 µA
200 µA
R_DS(on)
V_GS = 10 V, I_D = 31 A, Note 1
45 m Ω
ISOPLUS220 (IXTC)
E153432
G
DS
Isolated back surface
ISOPLUS247 (IXTR)
E153432
G
D
S
G = Gate
S = Source
Isolated back surface
D = Drain
TAB = Drain
Features
l _{International standard isolated}
packages
l _{UL recognized packages}
l _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
l _{Fast intrinsic diode}
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99622E(05/06)