IXTR36P15P Datasheet, PDF (1/2 Pages) IXYS Corporation – P-Channel Enhancement Mode

Preliminary Technical Information
PolarP^TM Power MOSFET
(Electrically Isolated Tab)
IXTC36P15P
IXTR36P15P
V = -150V
DSS
I_D25 = - 22A
R_DS(on) ≤ 120mΩ
P-Channel Enhancement Mode
Avalanche Rated
ISOPLUS247 (IXTR)
E153432
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
F_C
F_C
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 175°C
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS, t = 1minute
Mounting Force (ISOPLUS220)
Mounting Force (ISOPLUS247)
ISOPLUS220
ISOPLUS247
Maximum Ratings
-150
V
-150
V
± 20
V
± 30
V
- 22
A
-100
A
- 36
A
1.5
J
10
V/ns
150
W
- 55 ... +175
°C
175
°C
- 55 ... +175
°C
300
°C
260
°C
2500
V~
11..65 / 25..14.6
N/lb
20..120 / 4.5..27
N/lb
2
g
5
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = - 250μA
V_GS(th)
V_DS = V_GS, I_D = - 250μA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 150°C
R_DS(on)
V_GS = -10V, I_D = -18A, Note 1
Characteristic Values
Min. Typ. Max.
-150
V
- 3.0
- 5.0 V
±100 nA
- 10 μA
- 250 μA
120 mΩ
G
DS
Isolated
ISOPLUS220 (IXTC)
E153432
G
D
S
G = Gate
S = Source
Isolated
D = Drain
Features
z _{Silicon Chip on Direct-Copper Bond}
(DCB) Substrate
z _{Isolated Mounting Surface}
z _{2500V~ Electrical Isolation}
z _{Avalanche Rated}
z _{Extended FBSOA}
z _{Fast Intrinsic Diode}
z _{Low RDS(ON) and QG}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{High-Side Switching}
z _{Push Pull Amplifiers}
z _{DC Choppers}
z _{Automatic Test Equipment}
z _{Current Regulators}
z _{Battery Charger Applications}
© 2011 IXYS CORPORATION, All rights reserved
DS99792A(01/11)