IXTR32P60P Datasheet, PDF (1/5 Pages) IXYS Corporation – P-Channel Enhancement Mode Avalanche Rated

Preliminary Technical Information
PolarP^TM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTR32P60P
V_DSS =
I_D25 =
≤ R_DS(on)
- 600V
- 18A
385mΩ
ISOPLUS247 (IXTR)
E153432
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_AR
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
Maximum Ratings
- 600
V
- 600
V
±20
V
±30
V
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
-18
A
- 90
A
- 32
A
3.5
J
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
10
310
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
1.6mm (0.062 in.) from case for 10s
300
Plastic body for 10s
260
50/60 Hz, RMS
t = 1min
2500
I_ISOL ≤ 1mA
Mounting force
t = 1s
3000
20..120/4.5..27
°C
°C
V~
V~
N/lb.
5
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = - 250μA
V_GS(th)
V_DS = V_GS, I_D = - 250μA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
R_DS(on)
V_GS = -10V, I_D = -16A, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
- 500
V
- 2.5
- 4.5 V
±100 nA
- 50 μA
- 250 μA
385 mΩ
Isolated Tab
G = Gate D = Drain
S = Source
Features
z _{Silicon chip on Direct-Copper Bond}
(DCB) substrate
- UL recognized package
- Isolated mounting surface
- 2500V electrical isolation
z _{Avalanche rated}
z _{The rugged PolarP}TM _process
z _{Low QG}
z _{Low Drain-to-Tab capacitance}
z _{Low package inductance}
- easy to drive and to protect
Applications
z _{High side switching}
z _{Push-pull amplifiers}
z _{DC Choppers}
z _{Automatic test equipment}
z _{Load-Switch Application}
z _{Fuel Injection Systems}
© 2008 IXYS CORPORATION, All rights reserved
DS99992(05/08)