IXTR210P10T Datasheet, PDF (1/6 Pages) IXYS Corporation – P-Channel Enhancement Mode

Preliminary Technical Information
TrenchP^TM
Power MOSFET
IXTR210P10T
V_DSS =
I_D25 =
≤ R_DS(on)
-100V
-195A
8mΩ
P-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
ISOPLUS247
E153432
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_LRMS
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C (Chip Capability)
Lead Current Limit, RMS
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
Maximum Ratings
-100
V
-100
V
±15
V
±25
V
-195
A
-160
A
- 800
A
-100
A
3
J
10
595
- 55 ... +150
150
- 55 ... +150
300
260
2500
V/ns
W
°C
°C
°C
°C
°C
V~
20..120/4.5..27
5
N/lb.
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = - 250μA
V_GS(th)
V_DS = V_GS, I_D = - 250μA
I_GSS
V_GS = ±15V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = -10V, I_D = -105A, Note 1
Characteristic Values
Min. Typ. Max.
-100
V
- 2.5
- 4.5 V
±100 nA
- 25 μA
- 300 μA
8 mΩ
G
D
S
Isolated Tab
G = Gate D = Drain
S = Source
Features
z _{Silicon Chip on Direct-Copper Bond}
(DCB) Substrate
z _{Isolated Mounting Surface}
z _{2500V~ Electrical Isolation}
z _{Avalanche Rated}
z _{Extended FBSOA}
z _{Fast Intrinsic Rectifier}
z _{Low RDS(ON) and QG}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{High-Side Switching}
z _{Push Pull Amplifiers}
z _{DC Choppers}
z _{Automatic Test Equipment}
z _{Current Regulators}
z _{Battery Charger Applications}
© 2013 IXYS CORPORATION, All Rights Reserved
DS100398A(01/13)