IXTR20P50P Datasheet, PDF (1/5 Pages) IXYS Corporation – P-Channel Enhancement Mode

Preliminary Technical Information
PolarP^TM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTR20P50P
V_DSS =
I_D25 =
≤ R_DS(on)
- 500V
- 13A
490mΩ
ISOPLUS247 (IXTR)
E153432
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_AR
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
50/60 Hz, RMS
I_ISOL ≤ 1mA
Mounting force
Maximum Ratings
- 500
V
- 500
V
±20
V
±30
V
-13
A
- 60
A
- 20
A
2.5
J
10
V/ns
190
W
-55 ... +150
150
-55 ... +150
300
260
t = 1min 2500
t = 1s 3000
20..120 / 4.5..27
5
°C
°C
°C
°C
°C
V~
V~
N/lb.
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = - 250μA
V_GS(th)
V_DS = V_GS, I_D = - 250μA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
R_DS(on)
V_GS = -10V, I_D = -10A, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
- 500
V
- 2.5
- 4.5 V
±100 nA
- 25 μA
- 200 μA
490 mΩ
Isolated Tab
G = Gate
D = Drain
S = Source
Features
z _{Silicon chip on Direct-Copper Bond}
(DCB) substrate
- UL recognized package
- Isolated mounting surface
- 2500V electrical isolation
z _{Avalanche rated}
z _{The rugged PolarP}TM _process
z _{Low Q}
G
z _{Low Drain-to-Tab capacitance}
z _{Low package inductance}
- easy to drive and to protect
Applications
z _{High side switching}
z _{Push-pull amplifiers}
z _{DC Choppers}
z _{Automatic test equipment}
z _{Load-Switch Application}
z _{Fuel Injection Systems}
© 2008 IXYS CORPORATION, All rights reserved
DS99983(5/08)