IXTR140P10T Datasheet, PDF (1/6 Pages) IXYS Corporation – P-Channel Enhancement Mode

TrenchP^TM
Power MOSFET
IXTR140P10T
P-Channel Enhancement Mode
Avalanche Rated
V_DSS =
I_D25 =
≤ R_DS(on)
-100V
- 110A
11mΩ
ISOPLUS247
E153432
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
Maximum Ratings
-100
V
-100
V
±15
V
±25
V
- 110
A
- 400
A
-140
A
2.5
J
10
V/ns
270
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
300
°C
260
°C
2500
V~
20..120/4.5..27
5
N/lb.
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = - 250μA
V_GS(th)
V_DS = V_GS, I_D = - 250μA
I_GSS
V_GS = ±15V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = -10V, I_D = - 70A, Note 1
Characteristic Values
Min. Typ. Max.
-100
V
- 2.0
- 4.0 V
±100 nA
- 10 μA
-150 μA
11 mΩ
G
D
S
Isolated Tab
G = Gate D = Drain
S = Source
Features
z _{Silicon Chip on Direct-Copper Bond}
(DCB) Substrate
z _{Isolated Mounting Surface}
z _{2500V~ Electrical Isolation}
z _{Avalanche Rated}
z _{Extended FBSOA}
z _{Fast Intrinsic Diode}
z _{Low R and Q}
DS(ON)
G
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{High-Side Switching}
z _{Push Pull Amplifiers}
z _{DC Choppers}
z _{Automatic Test Equipment}
z _{Current Regulators}
z _{Battery Charger Applications}
© 2013 IXYS CORPORATION, All Rights Reserved
DS100376B(01/13)