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| IXTR102N65X2 Datasheet, PDF (1/5 Pages) IXYS Corporation – Advance Technical Information | |||
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X2-Class
Power MOSFET
(Electrically Isolated Tab)
Advance Technical Information
IXTR102N65X2
VDSS =
ID25 =
RDS(on) ï£
650V
54A
33mï
N-Channel Enhancement Mode
Avalanche Rated
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
dv/dt
TJ
TJM
Tstg
TL
TSOLD
VISOL
FC
Weight
Test Conditions
TJ = 25ï°C to 150ï°C
TJ = 25ï°C to 150ï°C, RGS = 1Mï
Continuous
Transient
TC = 25ï°C
TC = 25ï°C, Pulse Width Limited by TJM
TC = 25ï°C
TC = 25ï°C
TC = 25ï°C
IS ï£ IDM, VDD ï£ VDSS, TJ ï£ 150°C
Maximum Ratings
650
V
650
V
ï± 30
V
ï± 40
V
54
A
204
A
25
A
3
J
330
W
50
V/ns
-55 ... +150
ï°C
150
ï°C
-55 ... +150
ï°C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
50/60 Hz, 1 Minute
2500 ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï Vï¾
Mounting Force
20..120/4.5..27
N/lb
5
g
ISOPLUS247
E153432
G
D
S
Isolated Tab
G = Gate D = Drain
S = Source
Features
ï¬ Silicon Chip on Direct-Copper Bond
(DCB) Substrate
ï¬ Isolated Mounting Surface
ï¬ 2500V~ Electrical Isolation
ï¬ Low QG
ï¬ Avalanche Rated
ï¬ Low Package Inductance
Symbol
Test Conditions
(TJ = 25ï°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = ï± 30V, VDS = 0V
IDSS
VDS = VDSS, VGS= 0V
TJ = 125ï°C
RDS(on)
VGS = 10V, ID = 51A, Note 1
Characteristic Values
Min. Typ. Max.
650
V
3.0
5.0 V
ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï±ï 100 nA
25 ïA
500 ïA
33 mï
Advantages
ï¬ High Power Density
ï¬ Easy to Mount
ï¬ Space Savings
Applications
ï¬ Switch-Mode and Resonant-Mode
ï ï ï Power Supplies
ï¬ DC-DC Converters
ï¬ PFC Circuits
ï¬ AC and DC Motor Drives
ï¬ Robotics and Servo Controls
© 2015 IXYS CORPORATION, All Rights Reserved
DS100681(8/15)
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