IXTQ88N30P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHTTM Power MOSFET

PolarHT^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH 88N30P
IXTK 88N30P
IXTQ 88N30P
IXTT 88N30P
V
DSS
I_D25
R_DS(on)
= 300 V
= 88 A
≤ 40 mΩ
TO-247 (IXTH)
Symbol
V_DSS
V
DGR
V_GS
V_GSM
I_D25
I_D(RMS)
I_DM
I_AR
E
AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25° C to 150° C
T
J
=
25°
C
to
150°
C;
R
GS
=
1
MΩ
Continuous
Transient
T_C = 25° C
External lead current limit
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T
C
= 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS
T
J
≤150° C,
R
G
=
4
Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-247
TO-264
TO-3P & TO-268
Maximum Ratings
300
V
300
V
G
D
S
±20
V _{TO-264 (IXTK)}
±30
V
88
A
75
A
220
A
60
A
60
mJ
G
D
S
2.0
J
TO-3P (IXTQ)
10
V/ns
600
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
6.0
g
10
g
5.5
g
G
DS
TO-268 (IXTT)
G
S
D (TAB)
D (TAB)
(TAB)
D (TAB)
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV
DSS
V
GS
=
0
V,
I
D
=
250
µA
Characteristic Values
Min. Typ. Max.
300
V
V_GS(th)
V_DS = V_GS, I_D = 250µA
2.5
5.0 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V =0V
GS
T
J
=
125°
C
100 µA
1 mA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
40 m Ω
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l _{International standard package}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99129E(12/05)