IXTQ76N25T Datasheet, PDF (1/6 Pages) IXYS Corporation – N-Channel Enhancement Mode

Preliminary Technical Information
Trench Gate
Power MOSFET
IXTA76N25T IXTH76N25T
IXTI76N25T IXTP76N25T
IXTQ76N25T
N-Channel Enhancement Mode
V_DSS =
I_D25 =
R_DS(on) ≤
250V
76A
39mΩ
Typical avalanche BV = 300V
TO-263 (IXTA)
TO-247 (IXTH)
TO-262 (IXTI)
TO-220 (IXTP)
Symbol
V_DSS
V_DGR
V_GSM
I_D25
I_DM
I_AS
E_AS
P_D
T_J
T_JM
T_stg
T_L
M_d
F_C
Weight
G
S
(TAB)
G
DS
(TAB)
G
D
S
(TAB)
GDS
(TAB)
Test Conditions
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
250
V
250
V
TO-3P (IXTQ)
Transient
± 30
V
* T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
76
A
170
A
8
A
1.5
J
G
D
S
(TAB)
T_C = 25°C
460
-55 ... +150
150
-55 ... +150
1.6mm (0.062in.) from case for 10s
300
Plastic body for 10seconds
260
Mounting Torque TO-220,TO-3P,TO247
1.13 / 10
Mounting Force TO-262,TO-263
10..65 / 2.2..14.6
TO-262,TO-263
2.5
TO-220
3.0
TO-3P
5.5
TO-247
6.0
W
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb.
g
g
g
g
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{Avalanche rated}
z _{Low package inductance}
- easy to drive and to protect
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 1mA
V_GS = 0V, I_D = 10A
V_GS(th)
V_DS = V_GS, I_D = 1mA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ . Max.
250
V
300
3
5V
± 100 nA
2 μA
200 μA
39 mΩ
Applications
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor control}
z _{Uninterruptible power supplies}
z _{High speed power switching}
applications
© 2007 IXYS CORPORATION, All rights reserved
DS99663C(10/07)