IXTQ69N30 Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHT Power MOSFET

PolarHT^TM
Power MOSFET
IXTQ 69N30P
IXTT 69N30P
V
DSS
I_D25
R_DS(on)
= 300 V
= 69 A
= 49 mΩ
N-Channel Enhancement Mode
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T
J
T_JM
T_stg
T_L
M
d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 4 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (TO-3P)
TO-3P
TO-268
TO-3P (IXTQ)
Maximum Ratings
300
V
300
V
±20
V
±30
V
G
69
A
DS
200
A
69
A
50
mJ ^{TO-268 (IXTT)}
1.5
J
(TAB)
10
V/ns
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
5.5
g
5.0
g
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
! _{International standard packages}
! _{Unclamped Inductive Switching (UIS)}
rated
! _{Low package inductance}
- easy to drive and to protect
Symbol
Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
V
DSS
V
GS
=
0
V,
I
D
=
250
µA
Characteristic Values
Min. Typ. Max.
300
V
V_GS(th)
V_DS = V_GS, I_D = 250µA
2.5
5.0 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±100 nA
I
DSS
V =V
DS
DSS
V_GS = 0 V
T_J = 125°C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
49 mΩ
Advantages
! _{Easy to mount}
! _{Space savings}
! _{High power density}
PolarHT^TM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
© 204 IXYS All rights reserved
DS99078A(04/04)