IXTQ52P10P Datasheet, PDF (1/6 Pages) IXYS Corporation – P-Channel Enhancement Mode Avalanche Rated

PolarP^TM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
IXTA52P10P
IXTH52P10P
IXTP52P10P
IXTQ52P10P
TO-247 (IXTH)
V_DSS =
I_D25 =
≤ R_DS(on)
- 100V
- 52A
50mΩ
TO-220 (IXTP)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_AR
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
G
S
D (TAB)
Test Conditions
G
DS
D (TAB)
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
-100
V
-100
V
±20
V
±30
V
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
- 52
A
-130
A
- 52
A
1.5
J
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
10
300
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
300
°C
260
°C
Mounting torque (TO-3P,TO-220,TO-247) 1.13/10
Nm/lb.in.
TO-247
TO-3P
TO-220
TO-263
6.0
g
5.5
g
3.0
g
2.5
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = - 250μA
V_GS(th)
V_DS = V_GS, I_D = - 250μA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = -10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
-100
V
- 2.5
- 4.5 V
±100 nA
-10 μA
-150 μA
50 mΩ
G _DS
TO-3P (IXTQ)
D (TAB)
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features:
z _{International standard packages}
z _{Fast intrinsic diode}
z _{Dynamic dV/dt Rated}
z _{Avalanche Rated}
z _{Rugged PolarP}TM _process
z _{Low Q and R characterization}
G
ds(on)
z _{Low Drain-to-Tab capacitance}
z _{Low package inductance}
- easy to drive and to protect
Applications:
z _{Hight side switching}
z _{Push-pull amplifiers}
z _{DC Choppers}
z _{Current regulators}
z _{Automatic test equipment}
Advantages:
z _{Low gate charge results in simple}
drive requirement
z _{Improved Gate, Avalanche and}
dynamic dV/dt ruggedness
z _{High power density}
z _{Fast switching}
z _{Easy to parallel}
© 2008 IXYS CORPORATION, All rights reserved
DS99912A(5/08)