IXTQ50N20P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHT Power MOSFET N-Channel Enhancement Mode

PolarHT^TM
Power MOSFET
IXTQ 50N20P
IXTA 50N20P
IXTP 50N20P
N-Channel Enhancement Mode
Preliminary Data Sheet
V_DSS =
I_D25 =
= R_DS(on)
200 V
50 A
60 mΩ
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
V_DSS
V_DGR
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
T_J = 25°C to 175°C
T_J = 25°C to 175°C; R_GS = 1 MΩ
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 10 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
Mounting torque (TO-3P / TO-220)
TO-3P
TO-220
TO-263
200
V
G
200
V
DS
±20
V
50
A ^{TO-220 (IXTP)}
120
A
50
A
30
mJ
1.0
J
G _DS
(TAB)
(TAB)
10
V/ns
TO-263 (IXTA)
360
W
-55 ... +175
°C
175
°C
-55 ... +125
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
5.5
g
4
g
3
g
GS
(TAB)
G = Gate
S = Source
Features
D = Drain
TAB = Drain
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
200
V
V_GS(th)
V_DS = V_GS, I_D = 250µA
2.5
5.0 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 150°C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = I_T
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
50
60 mΩ
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
PolarHT^TM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
© 2004 IXYS All rights reserved
DS99156A(04/04)