IXTQ44N50P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV Power MOSFET

PolarHV^TM
Power MOSFET
IXTQ 44N50P
N-Channel Enhancement Mode
Avalanche Rated
V=
DSS
I_D25 =
≤ R_DS(on)
500
44
140
V
A
mΩ
Symbol
V_DSS
V
DGR
V_GS
V_GSM
I_D25
I_DM
I
AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25° C to 150° C
T
J
=
25°
C
to
150°
C;
R
GS
=
1
MΩ
Continuous
Transient
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T
C
= 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T
J
≤150° C,
R
G
=
10
Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque(TO-247)
Maximum Ratings _{TO-3P (IXTQ)}
500
V
500
V
±30
V
±40
V
44
A
110
A
44
A
55
mJ
1.7
J
10
V/ns
G
DS
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
650
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
6
g
Features
l _{International standard packages}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250µA
Characteristic Values
Min. Typ. Max.
500
V
l _{Easy to mount}
l _{Space savings}
l _{High power density}
V
GS(th)
V
DS
=
V,
GS
I
D
=
250µA
3.0
5.0 V
I_GSS
V_GS = ±30 V_DC, V_DS = 0
±10 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125° C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
140 mΩ
© 2006 IXYS All rights reserved
DS99372E(03/06)