IXTQ26N50P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHVTM Power MOSFET

PolarHV^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTQ 26N50P
IXTT 26N50P
IXTV 26N50P
IXTV 26N50PS
V_DSS =
I_D25 =
≤ R_DS(on)
500 V
26 A
230 mΩ
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T
J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuos
Transient
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 4 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-3P)
TO-3P
TO-268
PLUS220 & PLUS220SMD
500
V
G
D
500
V
S
±30
V ^{TO-268 (IXTT)}
±40
V
D (TAB)
26
A
78
A
G
S
26
A
40
mJ ^{PLUS220 (IXTV)}
1.0
J
D (TAB)
10
V/ns
400
W
G
D
S
D (TAB)
-55 ... +150
150
-55 ... +150
°C _{PLUS220SMD (IXTV_S)}
°C
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
6
g
5.5
g
5
g
G
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
500
V
V_GS(th)
V_DS = V_GS, I_D = 250µA
3.0
5.5 V
I_GSS
V_GS = ±30 V_DC, V_DS = 0
±100 nA
I
DSS
V =V
DS
DSS
V_GS = 0 V
T_J = 125° C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
230 m Ω
Features
l _{International standard packages}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99206E(12/05)