IXTQ22N60P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHVTM Power MOSFET N-Channel Enhancement Mode

PolarHV^TM
Power MOSFET
IXTQ 22N60P
IXTV 22N60P
IXTV 22N60PS
V_DSS = 600
I_D25
= 22
R_{DS (on)} ≤ 350
V
A
mΩ
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V_DSS
V_DGR
V
GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T
J
T_JM
T_stg
T_L
T
SOLD
M_d
F_C
Weight
Test Conditions
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Tranisent
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 4 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Mounting force
(TO-3P)
(PLUS 220)
TO-3P
PLUS220 & PLUS220SMD
TO-3P (IXTQ)
Maximum Ratings
600
V
600
V
±30
V
G
±40
V
DS
22
A
66
A
PLUS220 (IXTV)
22
A
40
mJ
1.0
J
10
V/ns
G
D
S
(TAB)
D (TAB)
400
-55 ... +150
150
-55 ... +150
W
°C ^{PLUS220SMD (IXTV_S)}
°C
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
11...65/2.5...15
N/lb
G
S
D (TAB)
6
g
G = Gate
D = Drain
5.0
g
S = Source
TAB = Drain
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
600
V
V_GS(th)
V_DS = V_GS, I_D = 250µA
3.0
5.5 V
I_GSS
V_GS = ±30 V_DC, V_DS = 0
±100 nA
I
DSS
V =V
DS
DSS
V_GS = 0 V
T_J = 125° C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
350 m Ω
Features
l _{International standard packages}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2005 IXYS All rights reserved
DS99250E(12/05)