IXTQ22N50P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHVTM Power MOSFET

PolarHV^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH 22N50P
IXTQ 22N50P
IXTV 22N50P
IXTV 22N50PS
V=
DSS
I_D25 =
≤ R_DS(on)
500 V
22 A
270 mΩ
TO-247 (IXTH)
Symbol
V_DSS
V_DGR
V_GS
V
GSM
I
D25
I_DM
I_AR
E
AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T
L
T_SOLD
M
d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T
C
= 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T
C
= 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 10 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-3P
PLUS220 & PLUS220SMD
Maximum Ratings
500
V
500
V
G
D
S
±30
V _{TO-3P (IXTQ)}
±40
V
22
A
66
A
22
30
A
mJ
G
DS
750
mJ
PLUS220 (IXTV)
10
V/ns
(TAB)
(TAB)
350
W
-55 ... +150
150
°C
°C
G
DS
-55 ... +150
°C
D (TAB)
300
°C ^{PLUS220SMD (IXTV...S)}
260
°C
1.13/10 Nm/lb.in.
5.5
g
4
g
G
S
D (TAB)
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 μA
Characteristic Values
Min. Typ. Max.
500
V
V
GS(th)
V
DS
=
V,
GS
I
D
=
250μA
3.0
5.5 V
I_GSS
V_GS = ±30 V_DC, V_DS = 0
±10 nA
I
DSS
V =V
DS
DSS
V_GS = 0 V
T_J = 125°C
5 μA
50 μA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
270 mΩ
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2006 IXYS All rights reserved
DS99351E(03/06)