IXTQ200N06P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHT Power MOSFET

PolarHT^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTQ 200N06P
V
DSS
I_D25
R_DS(on)
= 60
= 200
≤ 6.0
V
A
mΩ
Symbol
Test Conditions
Maximum Ratings TO-3P (IXTQ)
V_DSS
V_DGR
V_GS
V
GSM
I_D25
I_D(RMS)
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T
J
T_JM
T_stg
T_L
T
SOLD
M_d
Weight
T_J = 25° C to 175° C
T_J = 25° C to 175° C; R_GS = 1 MΩ
Transient
Continuous
T_C = 25° C
External lead current limit
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 4 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-3P)
TO-3P
60
V
60
V
±30
V
±20
V
200
A
75
A
400
A
60
A
80
mJ
4.0
J
10
V/ns
G
DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
714
W
-55 ... +175
°C
175
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
5.5
g
Features
l _{International standard package}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
60
V
V
GS(th)
V
DS
=
V,
GS
I
D
=
250µA
2.5
5.0 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 150° C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = 60A
V = 15 V, I = 400A
GS
D
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
6.0 m Ω
5.0
mΩ
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99273E(12/05)