IXTQ152N085T Datasheet, PDF (1/5 Pages) IXYS Corporation – N-Channel Enhancement Mode Avalanche Rated

Preliminary Technical Information
TrenchMV^TM
Power MOSFET
IXTH152N085T
IXTQ152N085T
N-Channel Enhancement Mode
Avalanche Rated
V_DSS =
I_D25 =
R_DS(on) ≤
85
152
7.0
V
A
mΩ
Symbol
V_DSS
V_DGR
V_GSM
I_D25
I_LRMS
I_DM
I_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C; R_GS = 1 MΩ
Transient
T_C = 25°C
Lead Current Limit, RMS
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS
T_J ≤ 175°C, R_G = 5 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque
TO-3P
TO-247
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 μA
V_GS(th)
V_DS = V_GS, I_D = 250 μA
I_GSS
V_GS = ± 20 V, V_DS = 0 V
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 150°C
R_DS(on)
V_GS = 10 V, I_D = 25 A, Notes 1, 2
© 2006 IXYS CORPORATION All rights reserved
Maximum Ratings
85
V
85
V
± 20
V
152
A
75
A
410
A
25
A
750
mJ
3
V/ns
360
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
1.13 / 10 Nm/lb.in.
5.5
g
6
g
Characteristic Values
Min. Typ. Max.
85
V
2.0
4.0 V
± 200 nA
5 μA
250 μA
5.5
7.0 mΩ
TO-247 (IXTH)
G
D
S
TO-3P (IXTQ)
(TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
DS99699 (11/06)