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IXTQ140N10P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHT™ Power MOSFET | |||
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PolarHTTM
Power MOSFET
IXTQ 140N10P
IXTT 140N10P
N-Channel Enhancement Mode
Avalanche Rated
V=
DSS
ID25 =
⤠RDS(on)
100 V
140 A
11 mâ¦
Symbol
V
DSS
VDGR
VGS
VGSM
ID25
ID(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
M
d
Weight
Test Conditions
T
J
= 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 Mâ¦
Continuous
Transient
TC = 25° C
External lead current limit
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS â¤IDM, di/dt â¤100 A/µs, VDD â¤VDSS,
TJ â¤150° C, RG = 4 â¦
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-3P)
TO-3P
TO-268
Maximum Ratings
100
V
100
V
±20
V
±30
V
140
A
75
A
300
A
60
A
80
mJ
2.5
J
TO-3P (IXTQ)
G
DS
TO-268 (IXTT)
(TAB)
10
V/ns
600
W
-55 ... +175
°C
175
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
5.5
g
5.0
g
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l International standard packages
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(T
J
=
25°
C,
unless
otherwise
specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
100
V
VGS(th)
VDS = VGS, ID = 250µA
3.0
5.0 V
I
GSS
V
GS
=
±20
V,
DC
V
DS
=
0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 175° C
25 µA
500 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
VGS = 15 V, ID = 300 A
Pulse test, t â¤300 µs, duty cycle d ⤠2 %
11 m â¦
9
mâ¦
Advantages
l Easy to mount
l Space savings
l High power density
© 2006 IXYS All rights reserved
DS99133E(12/05)
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