IXTQ120N15P Datasheet, PDF (1/5 Pages) IXYS Corporation – N-Channel Enhancement Mode

PolarHT^TM
Power MOSFET
IXTQ 120N15P
IXTT 120N15P
N-Channel Enhancement Mode
Avalanche Rated
V=
DSS
I_D25 =
≤ R_DS(on)
150 V
120 A
16 mΩ
Symbol
V_DSS
V
DGR
V_DSS
V_GSM
I_D25
I_D(RMS)
I
DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25° C to 175° C
T
J
=
25°
C
to
175°
C;
R
GS
=
1
MΩ
Continuous
Transient
T_C = 25° C
External lead current limit
T
C
=
25°
C,
pulse
width
limited
by
T
JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 4 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-3P)
TO-3P
TO-268
Maximum Ratings
150
V
150
V
±20
V
±30
V
120
A
75
A
260
A
60
A
60
mJ
2.0
J
10
V/ns
600
W
-55 ... +175
°C
175
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
5.5
g
5.0
g
Symbol
Test Conditions
(T
J
=
25°
C,
unless
otherwise
specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
150
V
V_GS(th)
V_DS = V_GS, I_D = 250µA
3.0
5.0 V
I
GSS
V
GS
=
±20
V,
DC
V
DS
=
0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 175° C
25 µA
500 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
16 m Ω
TO-3P (IXTQ)
G
DS
(TAB)
TO-268 (IXTT)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l _{International standard packages}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2005 IXYS All rights reserved
DS99280E(10/05)