IXTQ110N055P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHT Power MOSFET

PolarHT^TM
Power MOSFET
N-Channel Enhancement Mode
IXTQ 110N055P
IXTA 110N055P
IXTP 110N055P
V_DSS = 55 V
I_D25 = 110 A
R_DS(on) = 13.5 mΩ
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
V_DSS
V
DGR
V_GS
V_GSM
I
D25
I
DRMS
I_DM
I
AR
E
AR
E_AS
T_J = 25°C to 175°C
T
J
=
25°C
to
175°C;
R
GS
=
1
MΩ
Continuous
Tranisent
T
C
= 25°C
External lead current limit
T_C = 25°C, pulse width limited by T_JM
T
C
= 25°C
T
C
= 25°C
T_C = 25°C
55
V
55
V
±20
V
±30
V
110
A
75
A
250
A
110
A
30
mJ
1.0
J
dv/dt
P_D
T_J
T_JM
T_stg
T_L
I
S
≤
I,
DM
di/dt
≤
100
A/μs,
V
DD
≤
V,
DSS
T_J ≤ 150°C, R_G = 10 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
10
V/ns
330
W
-55 ... +175
°C
175
°C
-55 ... +150
°C
300
°C
260
°C
M_d
Mounting torque (TO-3P / TO-220)
1.13/10 Nm/lb.in.
Weight
TO-3P
TO-220
TO-263
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 μA
5.5
g
4
g
3
g
Characteristic Values
Min. Typ. Max.
55
V
V
GS(th)
V
DS
=
V,
GS
I
D
=
250μA
2.5
5.0 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125°C
25 μA
250 μA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
11 13.5 mΩ
G
D
S
TO-220 (IXTP)
(TAB)
G _DS
TO-263 (IXTA)
(TAB)
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2005 IXYS All rights reserved
DS99182A(05/05)