IXTP80N10T Datasheet, PDF (1/5 Pages) IXYS Corporation – TrenchMVTM Power MOSFET

TrenchMV^TM
Power MOSFET
IXTA80N10T
IXTP80N10T
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
P_D
dV/dt
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 175°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-263
TO-220
Maximum Ratings
100
V
100
V
± 20
V
± 30
V
80
A
220
A
25
A
400
mJ
230
W
10
V/ns
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
2.5
g
3.0
g
Symbol
Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 100μA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = 105V, V_GS= 0V
T_J = 150°C
R_DS(on)
V_GS = 10V, I_D = 25A, Note 1 & 2
Characteristic Values
Min. Typ. Max.
105
V
2.5
5.0 V
± 200 nA
5 μA
150 μA
14 mΩ
V_DSS =
I_D25 =
≤ R_DS(on)
100V
80A
14mΩ
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
GD _S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z _{International Standard Packages}
z _{175°C Operating Temperature}
z _{Avalanche Rated}
z _{High Current Handling Capability}
z _{Fast Intrinsic Diode}
z _{Low RDS(on)}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _Automotive
- Motor Drives
- DC/DC Conversion
- 42V Power Bus
- ABS Systems
z _{DC/DC Converters and Off-Line UPS}
z _{Primary Switch for 24V and 48V}
Systems
z _{High Current Switching Applications}
z _{Distributed Power Architechtures}
and VRMs
z _{Electronic Valve Train Systems}
© 2009 IXYS CORPORATION, All Rights Reserved
DS99648A(11/09)