IXTP6N50P Datasheet, PDF (1/5 Pages) IXYS Corporation – N-Channel Enhancement Mode Avalanche Rated

PolarHV^TM
Power MOSFET
IXTA 6N50P
IXTP 6N50P
N-Channel Enhancement Mode
Avalanche Rated
V_DSS = 500 V
I_D25 = 6 A
R_DS(on) ≤ 1.1 Ω
Symbol
V_DSS
V_DGR
V_GSS
V
GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P
D
T_J
T_JM
T
stg
T_L
T_SOLD
Test Conditions
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 18 Ω
T
C
= 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Maximum Ratings
500
V
500
V
TO-263 (IXTA)
± 30
V
± 40
V
G
S
6
A
15
A _{TO-220 (IXTP)}
6
A
20
mJ
250
mJ
10
V/ns
G _DS
100
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
G = Gate
S = Source
(TAB)
(TAB)
D = Drain
TAB = Drain
M_d
Weight
Mounting torque
TO-220
TO-263
(TO-220)
Symbol
Test Conditions
(T
J
=
25°
C,
unless
otherwise
specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
V_GS(th)
V_DS = V_GS, I_D = 50µA
I
GSS
V
GS
=
±30
V,
V
DS
=
0V
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125° C
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
1.13/10 Nm/lb.in.
4
g
3
g
Characteristic Values
Min. Typ. Max.
500
V
3.0
5.0 V
±100 nA
5 µA
50 µA
1.1 Ω
Features
l _{International standard packages}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99447E(04/06)