IXTP64N055T Datasheet, PDF (1/5 Pages) IXYS Corporation – TrenchMV Power MOSFET N-Channel EngancementMode Avalanche Rated

Preliminary Technical Information
TrenchMV^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTP64N055T
IXTY64N055T
V_DSS =
I_D25 =
R_DS(on) ≤
55 V
64 A
13 mΩ
TO-220 (IXTP)
Symbol
Test Conditions
Maximum Ratings
GD _S
D (TAB)
V_DSS
V_DGR
V_GSM
I_D25
I_L
I_DM
I_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
T_J = 25°C to 175°C
T_J = 25°C to 175°C; R_GS = 1 MΩ
Transient
T_C = 25°C
Package Current Limit, RMS
TO-252
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS
T_J ≤ 175°C, R_G = 18 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
55
55
± 20
64
25
170
10
250
3
V
V
V
A
A
A
A
mJ
V/ns
130
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
1.13 / 10 Nm/lb.in.
TO-220
TO-252
3
g
0.35
g
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 μA
V_GS(th)
V_DS = V_GS, I_D = 25 μA
I_GSS
V_GS = ± 20 V, V_DS = 0 V
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 150°C
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25, Notes 1, 2
Characteristic Values
Min. Typ. Max.
55
V
2.0
4.0 V
± 100 nA
1 μA
100 μA
13 mΩ
TO-252 (IXTY)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99498 (11/06)