IXTP60N20T Datasheet, PDF (1/4 Pages) IXYS Corporation – N-Channel Enhancement Mode For PDP Drivers Avalanche Rated

Trench^TM
Power MOSFET
N-Channel Enhancement Mode
For PDP Drivers
Avalanche Rated
IXTA60N20T
IXTP60N20T
IXTQ60N20T
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
P_D
T_J
T_JM
T_stg
T_L
T_sold
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque (TO-220 &TO-3P)
TO-263
TO-220
TO-3P
Maximum Ratings
200
V
200
V
±20
V
±30
V
60
A
150
A
30
A
700
mJ
500
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
2.5
g
3.0
g
5.5
g
Symbol
Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS= 0V
T_J = 150°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
200
V
3.0
5.0 V
±200 nA
1 μA
250 μA
32 40 mΩ
V_DSS = 200V
I_D25 = 60A
R_DS(on) ≤ 40mΩ
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
GD _S
TO-3P (IXTQ)
D (Tab)
G
D
S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
z _{High Current Handling Capability}
z _{175°C Operating Temperature}
z _{Avalanche Rated}
z _{Fast Intrinsic Rectifier}
z _{Low RDS(on)}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{DC-DC Converters}
z _{Battery Chargers}
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{DC Choppers}
z _{AC Motor Drives}
z _{Uninterruptible Power Supplies}
z _{High Speed Power Switching}
Applications
© 2010 IXYS CORPORATION, All Rights Reserved
DS99359B(7/10)