IXTP60N10T Datasheet, PDF (1/5 Pages) IXYS Corporation – N-Channel Enhancement Mode Avalanche Rated

TrenchMV^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA60N10T
IXTP60N10T
V_DSS = 100V
I_D25 = 60A
R_DS(on) ≤ 18mΩ
TO-263 (IXTA)
Symbol
V_DSS
V_DGR
V_GSM
I_D25
I_DM
I_A
E_AS
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-263
TO-220
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 50μA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 150°C
R_DS(on)
V_GS = 10V, I_D = 25A, Notes 1, 2
Maximum Ratings
100
V
100
V
± 30
V
60
A
180
A
10
A
500
mJ
176
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
1.13/10 Nm/lb.in
2.5
g
3.0
g
Characteristic Values
Min. Typ. Max.
100
V
2.5
4.5 V
± 100 nA
1 μA
100 μA
14.8
18 mΩ
G
S
TO-220 (IXTP)
(TAB)
G _DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{175°C Operating Temperature}
z _{Avalanche Rated}
z _{Low RDS(on)}
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
Applications
z _{DC/DC Converters and Off-line UPS}
z _{Primary Switch for 24V and 48V}
Systems
z _{High Current Switching Applications}
z _{Distributed Power Architechtures}
and VRMs
z _{Electronic Valve Train Systems}
z _{High Voltage Synchronous Recifier}
© 2007 IXYS CORPORATION, All rights reserved
DS99647B(08/08)