IXTP56N15T Datasheet, PDF (1/5 Pages) IXYS Corporation – N-Channel Enhancement Mode Avalanche Rated

Preliminary Technical Information
TrenchHV^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA56N15T
IXTP56N15T
V=
DSS
I=
D25
R_DS(on) ≤
150
56
36
V
A
mΩ
Symbol
V_DSS
V_DGR
V_GSM
I_D25
I_DM
I_AR
E_AS
dv/dt
P_D
T_J
T
JM
T_stg
T_L
T
SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C; R_GS = 1 MΩ
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I
S
≤
I,
DM
di/dt
≤
100
A/μs,
V
DD
≤
V
DSS
T
J
≤
175°C,
R
G
=
5
Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings TO-263 (IXTA)
150
150
± 30
56
140
5
500
V
V
G
V
S
A
A _{TO-220 (IXTP)}
A
mJ
(TAB)
3
V/ns
300
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
GD _S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
300
°C
260
°C
1.13 / 10 Nm/lb.in.
3
g
2.5
g
Features
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
z _{175 °C Operating Temperature}
Symbol
Test Conditions
(T
J
=
25°C
unless
otherwise
specified)
BV
DSS
V
GS
=
0
V,
I
D
=
250
μA
Characteristic Values
Min. Typ. Max.
150
V
V_GS(th)
V_DS = V_GS, I_D = 250 μA
2.5
4.5 V
I
GSS
V
GS
=
±
20
V,
V
DS
=
0
V
± 100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 150°C
5 μA
200 μA
R
DS(on)
V = 10 V, I = 28 A, Notes 1, 2
GS
D
36 mΩ
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2007 IXYS CORPORATION, All rights reserved
DS99800 (03/07)