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IXTP3N100D2 Datasheet, PDF (1/5 Pages) IXYS Corporation – Depletion Mode MOSFETs
Depletion Mode
MOSFETs
N-Channel
IXTA3N100D2
IXTP3N100D2
VDSX =
ID(on) >
 RDS(on)
1000V
3A
6
TO-263 AA (IXTA)
Symbol
VDSX
VGSX
VGSM
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25C to 150C
Continuous
Transient
TC = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-220)
TO-263
TO-220
Maximum Ratings
1000
V
20
V
30
V
125
W
- 55 ... +150
C
150
C
- 55 ... +150
C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
2.5
g
3.0
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSX
VGS = - 5V, ID = 250A
VGS(off)
VDS = 25V, ID = 250A
IGSX
VGS = 20V, VDS = 0V
IDSX(off)
VDS = VDSX, VGS= - 5V
TJ = 125C
RDS(on)
VGS = 0V, ID = 1.5A, Note 1
ID(on)
VGS = 0V, VDS = 50V, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
- 2.5
- 4.5 V
100 nA
5 A
50 A
6
3
A
G
S
D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Flammability Classification
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-Up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
© 2014 IXYS CORPORATION, All Rights Reserved
DS100184D(7/14)