IXTP36P15P Datasheet, PDF (1/6 Pages) IXYS Corporation – P-Channel Enhancement Mode Avalanche Rated

PolarP^TM
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
IXTA36P15P
IXTP36P15P
IXTQ36P15P
IXTH36P15P
TO-263 AA (IXTA)
TO-220AB (IXTP)
V_DSS =
I_D25
=
R ≤ _DS(on)
- 150V
- 36A
110mΩ
TO-3P (IXTQ)
G
S
D (Tab)
G
DS
D (Tab)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
Maximum Ratings
- 150
V
- 150
V
±20
V
±30
V
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
- 36
A
- 90
A
- 36
A
1.5
J
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
10
300
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
°C
260
°C
Mounting Torque (TO-3P,TO-220 & TO-247)
1.13/10
Nm/lb.in.
Mounting Force (TO-263)
10..65/2.2..14.6
N/lb.
TO-263
TO-220
TO-3P
TO-247
2.5
g
3.0
g
5.5
g
6.0
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = - 250 μA
V_GS(th)
V_DS = V_GS, I_D = - 250μA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = -10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
- 150
V
- 2.5
- 4.5 V
±100 nA
-10 μA
- 250 μA
110 mΩ
© 2013 IXYS CORPORATION, All Rights Reserved
G
D
S
TO-247 (IXTH)
D (Tab)
G
D
S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
z _{International Standard Packages}
z _{Rugged PolarP}TM _Process
z _{Avalanche Rated}
z _{Low Package Inductance}
z _{Fast Intrinsic Diode}
z _{Dynamic dv/dt Rated}
z _{Low RDS(ON) and QG}
z _{Low Drain-to-Tab Capacitance}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{High-Side Switching}
z _{Push Pull Amplifiers}
z _{DC Choppers}
z _{Automatic Test Equipment}
z _{Current Regulators}
DS99791D(01/13)