IXTP32N65X Datasheet, PDF (1/6 Pages) IXYS Corporation – Preliminary Technical Information

Preliminary Technical Information
X-Class
Power MOSFET
N-Channel Enhancement Mode
IXTP32N65X
IXTQ32N65X
IXTH32N65X
V_DSS =
I_D25 =
 R_DS(on)
650V
32A
135m
TO-220AB (IXTP)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25C to 150C
T_J = 25C to 150C, R_GS = 1M
Continuous
Transient
T_C = 25C
T_C = 25C, Pulse Width Limited by T_JM
I_S  I_D25, V_DD  V_DSS, T_J  150°C
T_C = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
TO-220
TO-3P
TO-247
Maximum Ratings
650
V
650
V
30
V
40
V
32
A
64
A
30
V/ns
500
W
-55 ... +150
C
150
C
-55 ... +150
C
300
°C
260
°C
1.13 / 10
Nm/lb.in
3.0
g
5.5
g
6.0
g
Symbol
Test Conditions
(T_J = 25C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = 30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
650
V
3.0
5.5 V
100 nA
5 A
50 A
135 m
GD _S
Tab
TO-3P (IXTQ)
G
D
S
Tab
TO-247 (IXTH)
G
D
S
Tab
G = Gate
D = Drain
S = Source Tab = Drain
Features
 _{Low RDS(ON) and QG}
 _{Low Package Inductance}
 _{Fast Intrinsic Rectifier}
Advantages
 _{High Power Density}
 _{Easy to Mount}
 _{Space Savings}
Applications
 _{Switch-Mode and Resonant-Mode}
Power Supplies
 _{DC-DC Converters}
 _{PFC Circuits}
 _{AC and DC Motor Drives}
 _{Robotics and Servo Controls}
© 2015 IXYS CORPORATION, All Rights Reserved
DS100585D(6/15)