IXTP2R4N50P Datasheet, PDF (1/6 Pages) IXYS Corporation – PolarHVTM Power MOSFET

PolarHV^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTP 2R4N50P
IXTY 2R4N50P
V_DSS = 500 V
I_D25 = 2.4 A
R_DS(on) ≤ 3.75 Ω
Symbol
Test Conditions
Maximum Ratings TO-220 (IXTP)
V_DSS
V
DGR
V_GSM
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T
J
T_JM
T_stg
T_L
T
SOLD
M_d
Weight
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Transient
Continuous
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 50 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-220
TO-252
(TO-220)
500
V
500
V
± 40
V
± 30
V
2.4
A
4.5
A
2.4
A
8
mJ
100
mJ
10
V/ns
55
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
4
g
0.8
g
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV
DSS
V
GS
=
0
V,
I
D
=
250
μA
Characteristic Values
Min. Typ. Max.
500
V
V_GS(th)
V_DS = V_GS, I_D = 25 μA
3.0
5.5 V
I_GSS
V_GS = ± 30 V, V_DS = 0 V
± 50 nA
I_DSS
V_DS = V_DSS
V =0V
GS
T
J
=
125°C
1 μA
50 μA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25, Note 1
3.75 Ω
G _DS
(TAB)
TO-252 AA (IXTY)
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packageS}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2006 IXYS All rights reserved
DS99445E(04/06)