IXTP2N80P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV Power MOSFET

PolarHV^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA2N80P
IXTP2N80P
IXTU2N80P
IXTY2N80P
V_DSS = 800 V
I_D25 = 2 A
R_DS(on) ≤
6Ω
TO-263 (IXTA)
Symbol
V
DSS
V_DGR
V_GSS
V
GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P
D
T_J
T_JM
T
stg
T
L
T_SOLD
M_d
Weight
Test Conditions
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 30 Ω
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-220
TO-263
TO-252
TO-251
(TO-220)
Maximum Ratings
800
V
800
V
± 30
V
± 40
V
2
A
4
A
2
A
10
mJ
100
mJ
5
V/ns
70
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
3
g
2.5
g
0.35
g
0.4
g
Symbol
Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
BV_DSS
V_GS = 0 V, I_D = 250 μA
V_GS(th)
V_DS = V_GS, I_D = 50 μA
I
GSS
V
GS
=
±30
V,
V
DS
=
0
V
I_DSS
V_DS = V_DSS
V_GS = 0 V
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Note 1
Characteristic Values
Min. Typ. Max.
800
V
3.0
5.5 V
±100 nA
T_J = 125°C
5 μA
50 μA
5.0
6.0 Ω
G
S
TO-220 (IXTP)
(TAB)
G _DS
TO-251 (IXTU)
(TAB)
G
D
S
(TAB)
TO-252 (IXTY)
G
S
(TAB)
G = Gate
S = Source
Features
D = Drain
TAB = Drain
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2006 IXYS All rights reserved
DS99595E(10/06)