IXTP2N60P Datasheet, PDF (1/4 Pages) IXYS Corporation – PolarHV Power MOSFET

PolarHV^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTP 2N60P
IXTY 2N60P
V = 500 V
DSS
I_D25 =
2A
≤ R_DS(on) 5.1 Ω
Symbol
V
DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T
L
T_SOLD
M_d
Weight
Test Conditions
T
J
= 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 50 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-220)
TO-220
TO-252
Maximum Ratings
600
V
600
V
TO-220 (IXTP)
± 30
V
± 40
V
2
A
4
A
G _DS
2
A
10
mJ
150
mJ ^{TO-252 AA (IXTY)}
(TAB)
10
V/ns
55
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
4
g
0.8
g
G
S
G = Gate
S = Source
Features
(TAB)
D = Drain
TAB = Drain
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 25 µA
V
GS(th)
V
DS
=
V,
GS
I
D
=
250
µA
I_GSS
V_GS = ±30 V, V_DS = 0 V
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125° C
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.0 V
±50 nA
1 µA
50 µA
5.1 Ω
l _{International standard packages}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99422E(04/06)