IXTP24P085T Datasheet, PDF (1/6 Pages) IXYS Corporation – TrenchP Power MOSFETs

TrenchP^TM
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
IXTA24P085T
IXTP24P085T
V_DSS =
I_D25 =
≤ R_DS(on)
- 85V
- 24A
65mΩ
TO-263 AA (IXTA)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-220
TO-263
Maximum Ratings
- 85
V
- 85
V
±15
V
±25
V
- 24
A
- 80
A
- 24
A
200
mJ
83
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
3.0
g
2.5
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = - 250μA
V_GS(th)
V_DS = V_GS, I_D = - 250μA
I_GSS
V_GS = ±15V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = -10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
- 85
V
- 2.5
- 4.5 V
±50 nA
- 3 μA
-100 μA
65 mΩ
G
S
D (Tab)
TO-220AB (IXTP)
GD _S
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
Features
z _{International Standard Packages}
z _{Avalanche Rated}
z _{Extended FBSOA}
z _{Fast Intrinsic Diode}
z _{Low RDS(ON) and QG}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{High-Side Switching}
z _{Push Pull Amplifiers}
z _{DC Choppers}
z _{Automatic Test Equipment}
z _{Current Regulators}
z _{Battery Charger Applications}
© 2013 IXYS CORPORATION, All Rights Reserved
DS99969B(01/13)