IXTP18N60PM Datasheet, PDF (1/4 Pages) IXYS Corporation – Polar Power MOSFET

Polar^TM
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
IXTP18N60PM
V_DSS =
I_D25 =
R_DS(on) ≤
600V
9A
420mΩ
OVERMOLDED
(IXTP...M) OUTLINE
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_sold
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque
Symbol
Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = ± 30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
R_DS(on)
V_GS = 10V, I_D = 9A, Note 1
T_J = 125°C
Maximum Ratings
600
V
600
V
±30
V
±40
V
9
A
54
A
18
A
1
J
10
V/ns
90
W
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
2.5
°C
°C
°C
°C
°C
Nm/lb.in.
g
Characteristic Values
Min. Typ. Max.
600
V
2.5
4.5 V
±100 nA
25 μA
250 μA
420 mΩ
G
DS
Isolated Tab
G = Gate
S = Source
D = Drain
Features
z _{Plastic Overmolded Tab for Electrical}
Isolation
z _{International Standard Package}
z _{Low RDS(on) and QG}
z _{Avalanche Rated}
z _{Low Package Inductance}
z _{Fast Intrinsic Rectifier}
Advantages
z _{High Power Density}
z _{Easy to Mount}
z _{Space Savings}
Applications
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{DC-DC Converters}
z _{Laser Drivers}
z _{AC and DC Motor Drives}
z _{Robotics and Servo Controls}
© 2010 IXYS CORPORATION, All Rights Reserved
DS99739G(10/10)