IXTP160N085T Datasheet, PDF (1/5 Pages) IXYS Corporation – Trench Gate Power MOSFET

Advance Technical Information
Trench Gate
Power MOSFET
N-Channel Enhancement Mode
IXTQ 160N085T
IXTA 160N085T
IXTP 160N085T
V_DSS =
I_D25 =
= R_DS(on)
85 V
160 A
6.0 mΩ
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
V_DSS
V
DGR
V_GSM
I_D25
I_DRMS
I_DM
I_AR
E
AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M
d
Weight
T_J = 25°C to 175°C
T
J
=
25°C
to
175°C;
R
GS
=
1
MΩ
T_C = 25°C
External lead current limit
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T
C
= 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T
J
≤
150°C,
R
G
=
10
Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
Mounting torque (TO-3P / TO-220)
TO-3P
TO-220
TO-263
85
V
85
V
±20
V
160
A
75
A
350
A
75
A
1.0
J
3
V/ns
360
W
-55 ... +175
°C
175
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
5.5
g
4
g
3
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
85
V
V
GS(th)
V = V , I = 1 mA
DS
GS D
2.0
4.0 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±200 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125°C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = 50 A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
5.0
6.0 m Ω
G
D
S
TO-220 (IXTP)
(TAB)
G _DS
TO-263 (IXTA)
(TAB)
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2005 IXYS All rights reserved
DS99347(02/05)