IXTP14N60P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHVTM Power MOSFET

PolarHV^TM Power
MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTA14N60P
IXTP14N60P
IXTQ14N60P
V_DSS =
I_D25 =
≤ R_DS(on)
TO-263
600V
14A
550mΩ
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque (TO-220)(TO-3P)
TO-263
TO-220
TO-3P
Maximum Ratings
600
V
600
V
±30
V
±40
V
14
A
42
A
14
A
900
mJ
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
2.5
g
3.0
g
5.5
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = ± 30V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.5 V
±100 nA
5 μA
100 μA
450 550 mΩ
G
S
TO-220
(TAB)
G _DS
TO-3P
(TAB)
G
D
S
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{Avalanche rated}
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
Applications
z _{Switched-mode and resonant-mode}
power supplies
z _{DC-DC Converters}
z _{Laser Drivers}
z _{AC and DC motor drives}
z _{Robotics and servo controls}
© 2008 IXYS CORPORATION, All rights reserved
DS99329F(12/08)